Junction Capacitance Techniques to Characterize Radiation Damage in Silicon
Author | : J. W. Diebold |
Publisher | : |
Total Pages | : 44 |
Release | : 1973 |
ISBN-10 | : UOM:39015095325604 |
ISBN-13 | : |
Rating | : 4/5 (04 Downloads) |
Book excerpt: Capacitance-voltage and transient capacitance measurements were made on Schottky barrier-on-phosphorus-doped silicon diodes. Energy levels, emission coefficients, and associated introduction rates were determined for defects produced by 1.0-MeV electrons, Co(60)-gamma rays, and 5-MeV neutrons. Total defect introduction rates agree well with carrier removal data of companion Hall effect samples. In the electron- and gamma-irradiated samples, specific introduction data reveal radiation-induced traps at E(c) - 0.24 eV, E(c) - 0.44 eV, and below midgap. The introduction rate of the traps located below midgap exhibits a strong dependence on donor concentration. In neutron-irradiated, float-zoned silicon a band of shallow trap levels is evident along with levels at E(c) - 0.37 eV, E(c) - 0.40 eV, and below midgap. In neutron-irradiated, crucible-grown silicon, trap levels are observed at E(c) - 0.18 eV, E(c) - 0.23 eV, E(c) - 0.24 eV, E(c) - 0.31 eV, and below midgap. (Author).